Y. B. Liu and A. A. Houck, “Quantum electrodynamics near a photonic bandgap,” Nature Physics, 13, 48-52 (2017). [read]

A. J. Sigillito, A. M. Tyryshkin, T. Schenkel, A. A. Houck, and S. A. Lyon, “Electrically driving nuclear spin qubits with microwave photonic bangap resonators,” arXiv:1701.06650 (2017) [read]

C. Eichler, A. J. Sigillito, S. A. Lyon, and J. R. Petta, “Electron spin resonance at the level of 104 spins using low impedance superconducting resonators,” Physical Review Letters 118, 037701 (2017). [read]

X. Mi, J. V. Cady, D. M. Zajac, P. W. Deelman, and J. R. Petta, “Strong coupling of a single electron in silicon to a microwave photon,” Science 355, 156 (2017). [read]

X. Mi, J. V. Cady, D. M. Zajac, J. Stehlik, L. F. Edge, and J. R. Petta, “Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon,” Applied Physics Letters 110, 043502 (2017). [read]


A. J. Sigillito, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M. Itoh, and S. A. Lyon, “Large Stark tuning of donor electron spin qubits in germanium,” Phys. Rev. B, 94, 125204 (2016). [read]

E. S. Petersen, A. M. Tyryshkin, J. J.L. Morton, E. Abe, S. Tojo, K. M. Itoh, M. L. W. Thewalt, and S. A. Lyon, “Nuclear spin decoherence of neutral P-31 donors in silicon: Effect of environmental Si-29 nuclei,” Phys. Rev. B, 93, 161202 (2016). [read]

T. Yasukawa, A. J. Sigillito, B. C. Rose, A. M. Tyryshkin, and S. A. Lyon, “Addressing spin transitions on Bi-209 donors in silicon using circularly polarized microwaves,” Phys. Rev. B, 93, 121306 (2016). [read]

G. Pica, B. W. Lovett, R. N. Bhatt, T. Schenkel, and S. A. Lyon, “Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings,” Phys. Rev. B, 93, 035306 (2016). [read]

G. Burkard and J. R. Petta, “Dispersive readout of valley splittings in cavity-coupled silicon quantum dots,” Physical Review B 94, 195305 (2016). DOI: 10.1103/PhysRevB.94.195305 [read]

J. Stehlik, Y.-Y. Liu, C. Eichler, T. R. Hartke, X. Mi, M. J. Gullans, J. M. Taylor, and J. R. Petta, “Double quantum dot Floquet gain medium,” Physical Review X 6, 041027 (2016). [read]

S. Sangtawesin, C. A. McLellan, B. A. Myers, A. C. Bleszynski Jayich, D. D. Awschalom, J. R. Petta, “Hyperfine-enhanced gyromagnetic ratio of a nuclear spin in diamond,” New J. Phys. 18, 083016 (2016). doi:10.1088/1367-2630/18/8/083016. [read]

J. Stehlik, M. Z. Maialle, M. H. Degani, and J. R. Petta, “Role of multilevel Landau-Zener interference in extreme harmonic generation,” Physical Review B 94, 075307 (2016). [read]

D. M. Zajac, T. M. Hazard, X. Mi, E. Nielsen, and J. R. Petta, “Scalable gate architecture for a one-dimensional array of semiconductor spin qubits,”  Physical Review Applied 6, 054013 (2016). DOI: 10.1103/PhysRevApplied.6.054013 [read]

M. J. Gullans, J. Stehlik, Y.-Y. Liu, C. Eichler, J. R. Petta, and J. M. Taylor, “Sisyphus thermalization of photons in a cavity-coupled double quantum dot,” Physical Review Letters 117, 056801 (2016). DOI: 10.1103/PhysRevLett.117.056801 [read]


A.  J. Sigillito, R. M. Jock, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M. Itoh, and S. A. Lyon, “Electron spin coherence of shallow donors in natural and isotopically enriched germanium,” Phys. Rev. Lett. 115, 247601 (2015). DOI: 10.1103/PhysRevLett.115.247601. [read]

A. J. Sigillito, A. M. Tyryshkin, and S. A. Lyon, “Anisotropic Stark effect and electric-field noise suppression for phosphorus donor qubits in silicon,” Phys Rev Lett 114, 217601. DOI: 10.1103/PhysRevLett.114.21760. [read]

S. Shankar, A. M. Tyryshkin, and S. A. Lyon, “ESR measurements of phosphorus dimers in isotopically enriched Si-28 silicon,” Phys Rev B 91, 245206. DOI: 10.1103/PhysRevB.91.245206. [read]

C. C. Lo, M. Urdampilleta, P. Ross, M. F. Gonzalez-Zalba, J. Mansir, S. A. Lyon, M. L. W. Thewalt, and J. J. L. Morton, “Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon,” Nat Mater 14, 490. DOI: 10.1038/NMAT4250. [read]

M. J. Gullans, Y.-Y. Liu, J. Stehlik, J. R. Petta, and J. M. Taylor, “Phonon-assisted gain in a semiconductor double quantum dot maser,” Phys. Rev. Lett. 114, 196802. [read]

D. M. Zajac, T. M. Hazard, X. Mi, K. Wang, and J. R. Petta, “A reconfigurable gate architecture for Si/SiGe quantum dots,” Appl. Phys. Lett. 103, 132410. [read]

X. Mi, T. M. Hazard, C. M. Payette, K. Wang, D. M. Zajac, J. V. Cady, and J. R. Petta, “Investigation of mobility limiting mechanisms in undoped Si/SiGe heterostructures,” Phys. Rev. B 92, 035304. [read]

J. Jhaveri, K. A. Nagamatsu, A. H. Berg, G. Man, G. Sahasrabudhe, S. Wagner, J. Schwartz, A. Kahn, and J. C. Sturm, "Double-heterojunction crystalline silicon solar cell with electron-selective TiO2 cathode contact fabricated at 100°C with open-circuit voltage of 640 mV," Proc. IEEE 42nd Photovoltaic Spec. Conf. (PVSC), June 14-19, 2015, New Orleans, LA. [read]

J. A. Spechler, K. A. Nagamatsu, J. C. Sturm, and C. B. Arnold, “Improved efficiency of hybrid organic photovoltaics by pulsed laser sintering of silver nanowire network transparent electrode,” ACS Applied Materials & Interfaces, 7, pp. 10556-10562 (2015). doi: 10.1021/acsami.5b02203 [read]

K. A. Nagamatsu, S. Avasthi, G. Sahasrabudhe, G. Man, J. Jhaveri, A. H. Berg, J. Schwartz, A. Kahn, S. Wagner, and J. C. Sturm, “Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell,” Appl. Phys. Lett. 106, (2015). doi: 10.1063/1.4916540 [read]

G. Sahasrabudhe, S. M. Rupich, J. Jhaveri, A. H. Berg, K. A. Nagamatsu, G. Man, Y. J. Chabal, A. Kahn, S. Wagner, J. C. Sturm, and J. Schwartz, "Low-temperature synthesis of a TiO2/Si heterojunction," Journal of the American Chemical Society, vol. 137, pp. 14842-14845 (2015). doi: 10.1021/jacs.5b09750 [read]

Y.-Y. Liu, J. Stehlik, M. J. Gullans, J. M. Taylor, and J. R. Petta, “Injection locking of a semiconductor double-quantum-dot micromaser,” Phys. Rev. A 92, 053802 (2015). [read] 

Y.-Y. Liu, J. Stehlik, C. Eichler, M. J. Gullans, J. M. Taylor, and J. R. Petta, “Semiconductor double quantum dot micromaser,” Science 347, 285. [read]